Spectroscopy and analysis of components for EUV lithography and EUV mask inspection (EUV-4-LITHO)

Extreme ultraviolet (EUV) radiation is light with a very short wavelength and is used in so-called EUV photolithography to produce the smallest semiconductor components. In this process, the structural information of a photomask is imaged onto a previously prepared silicon wafer using a reducing microscope. The nanostructures written on this "silicon wafer" form the basis for modern computer chips and information memories. For the next generation of EUV lithography facilities, it will be of great importance to examine the photomask with EUV radiation with respect to defects.

In the EUV-4-LITHO project, a compact laser-driven EUV source will be developed to test and optimize components used in EUV lithography and EUV mask inspection facilities. Special focus is on the broadband measurement of multilayer systems used in EUV mirrors and EUV photomasks. With cooperation partners from Germany and abroad, a high-resolution EUV spectrometer is being developed with which multilayer systems can be measured with unprecedented precision.